2SJ278
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
I
D
= –1 A
Drain to Source On State Resistance
R
DS(on)
(
)
–1.0
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
0.5
V
GS
= –4 V
–10 V
–0.8
-0.6
–0.5 A
-0.4
0.2
0.1
–0.2
–0.2 A
0
–2
–4
–6
Gate to Source Voltage
–10
V
GS
(V)
–8
0.05
–0.05 –0.1 –0.2 –0.5 –1 –2
Drain Current I
D
(A)
–5
Static Drain to Source on State Resistance
R
DS(on)
(
)
Pulse Test
1.6
–1 A
1.2
V
GS
= –4 V
–0.5 A
–0.2 A
–0.5 A
–0.2 A
–1 A
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Forward Transfer Admittance vs.
Drain Current
5
2
1
0.5
Tc = –25 °C
25 °C
75 °C
0.8
–10 V
0.4
0
–40
0.2
0.1
V
DS
= –10 V
Pulse Test
0.05
–0.01 –0.02
–0.05 –0.1 –0.2
–0.5
–1
0
40
80
120
160
Case Temperature Tc (°C)
Drain Current I
D
(A)
4
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