2SJ247
Body-Drain Diode Reverse
Recovery Time
500
Reverse Recovery Time t rr (ns)
200
C (pF)
100
50
20
10
0.5
–0.2
di/dt = 50 A/
µ
s
V
GS
= 0
10000
3000
1000
300
100
Typical Capacitance
vs. Drain-Source Voltage
V
GS
= 0, f = 1 MHz
Ciss
Capacitance
Coss
Crss
30
10
0
–10
–20
–30
Drain to Source Voltage
–40
–50
V
DS
(V)
–0.5 –1 –2
–5 –10 –20
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
0
Drain to Source Voltage V
DS
(V)
–20
–40
–60
–80
I
D
= –8 A
V
GS
–16
–20
100
Gate to Source Voltage V
GS
(V)
V
DD
= –10 V
–25 V
–50 V
–50 V
–25 V
V
DD
= –10 V
0
–4
–8
–12
500
200
100
50
20
10
Switching Characteristics
V
GS
= –10 V, V
DD
= –30 V
:
.
Pw = 2
µ
s, duty
1%
t d (off)
V
DS
Switching Time t (ns)
tf
tr
t d (on)
–0.5 –1 –2
–5
Drain Current I
D
(A)
–10
–100
0
20
40
60
80
Gate Charge Qg (nc)
5
–0.1 –0.2
5
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