2SJ246 L , 2SJ246 S
Body to Drain Diode Reverse
Recovery Time
200
t rr (ns)
10000
5000
(pF)
100
Typical Capacitance vs. Drain to
Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time
2000
50
Capacitance
C
1000
Ciss
500
Coss
200
100
0
Crss
–10
–20
–30
Drain to Source Voltage
–40
–50
V
DS
(V)
20
di/dt = 50 A/µs, Ta = 25°C
V
GS
= 0, Pulse test
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
V
DS
(V)
V
DD
= –10 V
–25 V
–20
V
DS
–40
V
DD
= –25 V
–10 V
–4
V
GS
(V)
0
0
Switching Characteristics
500
V
GS
= –10 V, PW = 2 µs,
V
DD
= –30 V, duty
<
1 %
=
:
td(off)
tf
200
t (ns)
Switching Time
100
50
tr
20
10
5
–0.1 –0.2
Drain to Source Voltage
–8
–60
V
GS
–12
Gate to Source Voltage
–80
I
D
= –7 A
–8
–16
–24
–32
Gate Charge Qg (nc)
–16
–20
–40
td(on)
–100
0
–0.5 –1
–2
–5
Drain Current I
D
(A)
–10
5
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