2SJ245 L , 2SJ245 S
Body to Drain Diode Reverse Recovery Time
1000
t rr (ns)
500
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
C (pF)
500
Ciss
Reverse Recovery Time
200
100
50
di/dt = 50 A/µs
V
GS
= 0
Ta = 25°C
Pulse test
200
100
Coss
Capacitance
Crss
50
V
GS
= 0
f = 1 MHz
20
0
–10
–20
–30
–40
–50
Drain to Source Voltage V
DS
(V)
20
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current I
DR
(A)
V
DS
(V)
0
Dynamic Input Characteristics
V
DD
= –10 V
–25 V
–50 V
V
DD
= –50 V
–25 V
–10 V
V
DS
0
V
GS
(V)
500
Switching Characteristics
t (ns)
–20
–4
200
100
V
GS
= –10 V
50 V
DD
= –30 V
PW = 2
µ
s
duty
1%
20
10
t
f
t
d
(off)
Drain to Source Voltage
–60
V
GS
I
D
= –5 A
8
16
24
32
Gate Charge Qg (nc)
–12
Switching Time
–40
–8
Gate to Source Voltage
t
r
t
d
(on)
–80
–16
–20
40
–100
0
5
–0.1 –0.2 –0.5 –1
Drain Current
–2
–5
I
D
(A)
–10
5
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