2SJ245 L , 2SJ245 S
–1.0
Drain to Source Saturation Voltage
V
DS(on)
(V)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse test
2
1
–0.8
I
D
= –3 A
–0.6
–2 A
0.5
V
GS
= –4 V
–10 V
–0.4
–1 A
Pulse test
0
–2
–4
–6
Gate to Source Voltage
–8
V
GS
(V)
–10
0.2
0.1
–0.2
0.05
–0.5
–1
–2
–5
Drain Current
–10 –20
I
D
(A)
–50
Static Drain to Source on State Resistance
R
DS(on)
(
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse test
0.8
Forward Transfer Admittance
vs. Drain Current
10
5
Tc = –25°C
25°C
0.6
–3 A
V
GS
= –4 V
–3 A
–1, –2 A
2
1
75°C
0.4
0.5
0.2
–10 V
0
–40
–I
D
= –1, –2 A
160
0.2
0.1
–0.1 –0.2 –0.5 –1
Drain Current
Pulse test
V
DS
= –10 V
–2
–5
I
D
(A)
–10
0
40
80
120
Case Temperature Tc (°C)
4
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