2SJ245 L , 2SJ245 S
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
–60
Typ
Max
Unit
V
Test conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
———————————————————————————————————————————–
———————————————————————————————————————————–
±20
V
———————————————————————————————————————————–
–1.0
0.2
±10
–100
–2.0
0.25
µA
µA
V
———————————————————————————————————————————–
———————————————————————————————————————————–
———————————————————————————————————————————–
R
DS(on)
V
GS(off)
I
D
= –1 mA, VDS = –10 V
I
D
= –3 A
V
GS
= –10 V *
I
D
= –3 A
V
GS
= –4 V *
V
DS
= –50 V, V
GS
= 0
————————————————————————–
0.28
0.38
———————————————————————————————————————————–
Forward transfer admittance
|y
fs
|
Ciss
Coss
Crss
t
d(on)
2.2
3.7
S
———————————————————————————————————————————–
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
610
315
95
12
45
170
90
–1.1
pF
pF
pF
ns
ns
ns
ns
V
I
F
= –5 A, V
GS
= 0
IF = –5 A, V
GS
= 0,
diF / dt = 50 A / µs
I
D
= –3 A
V
DS
= –10 V *
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –3 A
V
GS
= –10 V
R
L
= 10
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————–
————————————————————————————————
————————————————————————————————
————————————————————————————————
t
f
V
DF
t
rr
t
d(off)
t
r
———————————————————————————————————————————–
———————————————————————————————————————————–
160
ns
———————————————————————————————————————————–
2
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