2SJ244
Reverse Recovery Time vs.
Reverse Drain Current
2000
2000
Switching Time vs. Drain Current
V
GS
= - 4 V, V
DD
= - 10 V
PW = 2 µs, Duty Cycle = 1 %
t rr ( ns )
di/dt = -10 A/µs
PW = 10 µs
1000
1000
td(off)
tf
tr
Reverse Recovery Time
t ( ns )
Switching Time
500
500
200
200
100
100
td(on)
50
50
20
-0.1
-0.2
-0.5
-1.0
-2
-5
20
-10
-0.1
-0.2
-0.5
-1.0
-2
-5
-10
Reverse Drain Current
I
DR
(A)
Drain Current
I
D
(A)
Dynamic Input Characteristics
-25
-10
Typical Capacitance vs.
Drain to Source Voltage
1000
V
GS
= 0
I
D
= -4 A
(V)
Pulse Test
-20
-5 V
V
GS
( V )
V
DD
= -10 V
-8
( pF )
500
Coss
f = 1 MHz
V
DS
C
Typical Capacitance
Drain to Source Voltage
Gate to Source Voltage
-15
V
GS
200
100
50
Ciss
-6
-10
-4
Crss
-5
V
DD
= -10 V
-5 V
-2
20
10
-0.1
-0.2
-0.5
-1.0
-2
-5
Drain to Source Voltage V
DS
(V)
-10
V
DS
0
6
8
10
0
2
4
Gate Charge
Qg
( nc )
5