2SJ244
Silicon P Channel MOS FET (DIII-L)
Application
UPAK
High speed power switching
Low voltage operation
3
2
1
Features
• Very low on–resistance
• High speed switching
• Suitable for camera or VTR motor drive
circuit, power switch, solenoid drive and etc.
D
4
G
1. Gate
2. Drain
3. Source
4. Drain
S
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
Ratings
–12
±7
±2
±4
1
150
–55 to +150
Unit
V
V
A
A
W
°C
°C
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Pch**
Tch
Tstg
I
D(pulse)
*
I
D
V
GSS
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* PW < 100 µs, duty cycle < 10 %
** Value on the alumina ceramic board (12.5x20x0.7 mm)
*** Marking is "JY".
1
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