2SJ234
L
, 2SJ234
S
Body – Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time trr (ns)
di / dt = 50 A /
µ
s, Ta = 25°C
V
GS
= 0
Capacitance C (pF)
1000
10000
Typical Capacitance vs.
Drain to Source Voltage
300
V
GS
= 0
f = 1 MHz
100
30
Ciss
Coss
100
Crss
10
3
1
– 0.01 – 0.03
10
0
–10
– 20
– 30
– 40
– 50
Drain to Source Voltage V
DS
(V)
– 0.1
– 0.3
–1
–3
–10
Reverse Drain Current I
DR
(A)
Dynamic Input Characteristics
0
V
DD
= –10 V
– 25 V
–10
Drain to Source Voltage V
DS
(V)
I
D
= – 3 A
Gate to Source Voltage V
GS
(V)
–4
300
Switching Time t (ns)
0
1000
Switching Characteristics
.
V
GS
= –10 V,V
DD
=
– 30 V
.
PW = 2
µ
s, duty 1 %
td (off)
100
tf
30
tr
10
td (on)
– 20
V
DS
– 30
V
GS
– 40
V
DD
= – 25 V
–10 V
–8
–12
–16
3
1
– 0.01 – 0.03
– 50
0
4
8
12
16
– 20
20
– 0.1
– 0.3
–1
–3
–10
Gate Charge
Q
g (nc)
Drain Current I
D
(A)
5
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