2SJ234
L
, 2SJ234
S
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
Min
–30
Typ
Max
Unit
V
Test Conditions
I
D
= –10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
———————————————————————————————————————————
———————————————————————————————————————————
±20
V
———————————————————————————————————————————
–1.0
±10
–100
–2.0
µA
µA
V
———————————————————————————————————————————
———————————————————————————————————————————
V
GS(off)
R
DS(on)
V
DS
= –25 V, V
GS
= 0
I
D
= –1 mA
VDS = –10 V
———————————————————————————————————————————
Static drain to source on state
resistance
0.3
0.4
——————————
0.5
0.7
I
D
= –1.5 A
V
GS
= –10 V *
ID = –1.5 A
VGS = –4 V *
——————————
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
Ciss
Coss
Crss
t
d(on)
1.0
1.8
S
———————————————————————————————————————————
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn–on delay time
Rise time
Turn–off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
* Pulse Test
245
170
60
7
25
85
72
–1.1
pF
pF
pF
ns
ns
ns
ns
V
I
F
= –2.5 A, V
GS
= 0
I
F
= –2.5 A, V
GS
= 0,
di
F
/ dt = 50 A / µs
I
D
= –1.5 A
V
DS
= –10 V *
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
I
D
= –1.5 A
V
GS
= –10 V
R
L
= 20
————————————————————————————————
————————————————————————————————
———————————————————————————————————————————
————————————————————————————————
————————————————————————————————
————————————————————————————————
t
f
V
DF
t
rr
t
d(off)
t
r
———————————————————————————————————————————
———————————————————————————————————————————
80
ns
———————————————————————————————————————————
2
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index