2SJ234
Application
High speed power switching
L
, 2SJ234
DPAK-1
DPAK
S
Silicon P Channel MOS FET
Features
Low on–resistance
High speed switching
Low drive current
4 V gate drive device - - - can be driven from
5 V source
• Suitable for DC – DC convertor, motor drive,
power switch, solenoid drive
12
4
3
12
3
4
S Type
D
G
L Type
1. Gate
2. Drain
3. Source
4. Drain
S
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
*
**
PW
10 µs, duty cycle
1 %
Value at Tc = 25 °C
Symbol
V
DSS
Ratings
–30
±20
–2.5
–10
–2.5
10
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
Pch**
Tch
Tstg
I
DR
I
D(pulse)
*
I
D
V
GSS
———————————————————————————————————————————
———————————————————————————————————————————
———————————————————————————————————————————
1
Home Index Bookmark Pages Text
Previous Next
Pages: Home Index