SERIES LINEUP
2.6 Power MOS FET DV Series
Features
• Super Low “on” resistance; 50% Less R
DS(on)
than DIV Series for same die area.
• Low driving Gate voltage
4 V and 2.5 V Gate Drive capability for direct driving of microcomputers and TTL, and 3 V Battery source.
• Low Gate charge capability: 50% Less Qg than DIV Series for same R
DS(on)
characteristics.
• Pch/Nch complementary
• High avalanche destruction capability
Table 2-8 Typical DV-L Series Characteristics
Maximum Ratings
Part
Number
(HAT1020R)
V
DSS
V
GSS
I
D
(V)
(V)
(A)
–30
±20
±10
±20
±10
±20
±20
±20
±20
±20
±20
±20
±20
Electrical Characteristics (typ)
|y
fs
|
*2
t
on
t
off
(S)
(ns) (ns)
(8.0) (235) (95)
Ciss
(pF)
(670)
Package
FP-8DA
(JEDEC
SOP-8)
4 V R
DS(on)
(Ω)
*2
10 V R
DS(on)
*2
P
ch
*1
Max
Typ
Max
(W) Typ
0.09
0.023
0.25
0.09
0.055
0.04
0.016
0.11
0.2
10 m
10 m
10 m
5.8 m
0.13
0.04
0.4
0.11
0.08
0.05
0.02
0.15
0.4
16 m
16 m
16 m
10 m
0.05
0.18
0.04
0.026
0.011
0.08
0.13
7m
7m
7m
4.5 m
0.07
0.25
0.05
0.03
Note
–4.5 2
–6.5 2
–2.5 2
–4
5
7
10
2
2
2
2
(HAT1023R)
*3
–20
(HAT1024R)
–30
(10.0) (320) (750) (1200)
(4.0) (80)
(35)
(250) Pch×2
(HAT1025R)
*3
–20
(HAT2016R)
(HAT2020R)
(HAT2022R)
(HAT3004R)
TO-220CFM 2SK2529
LDPAK
TO-3P
2SK2553
2SK2586
2SK2554
30
30
30
30
–30
60
60
60
60
(6.0) (110) (210) (530) Pch×2
(6.5) (115) (75)
(350) Nch×2
(10.0) (180) (125) (570)
0.0135 (18.0) (255) (260) (1250)
0.1
0.25
10 m
10 m
10 m
6m
(3.0) (70)
(3.0) (70)
55
55
60
80
265
265
295
480
(45)
(45)
830
830
850
(180) Nch/
(250) Pch in
3550
3550
3550
3.5 2
–2.5
50
50
60
75
35
75
125
150
2100 7700
Notes: ( ) indicates a product under development, and subject to specification changes without notice.
1. Allowable value at T
C
= 25°C
2. Test conditions: V
DS
> I
D
×
R
DS(on)
, I
D
= 1/2 I
D
max
3. 2.5-V driving
16
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