Hitachi IGBT Module Application Manual
Although this example uses a 1-in-1 element, the results are the
same for a 2-in-1 element.
The gate wiring must be configured orthogonally or separated to avoid mutual induction. To make the
inductance of the gate wiring as small as possible, use a tightly twisted pair or similar wiring techniques.
corresponding to the number of parallels is arranged as shown in Figure 32, the current balance can easily be
kept even with a hardware configuration using laminate bus bars (that is, a configuration that makes use of
mutually insulated and cemented wiring plates P and N). Also, make sure that all output terminal wiring is
balanced, and when using gate wiring in parallel, including this type, note the following:
To avoid noise generation in gate wiring or main circuit wiring due to mutual
induction or excessive potential difference, use orthogonal wiring or keep
adequate distance between cables. If you must use balanced wiring, maintain
low inductance over the gate wiring.
Since there is a high potential difference between the upper and lower arm gate
wires, keep them sufficiently apart from each other.
For the upper and lower arm gate wires, make equal the lengths and inductance
values of the wires connecting to the drivers. (Use twisted pairs of the same
length for the gate wires.)
Connect a snubber circuit between segment C and E of each module
to restrict the surge voltage.
Figure 32. Example of Parallel Connection Wiring