Hitachi IGBT Module Application Manual
5.4
Parallel Circuitry Connections
As described earlier in this document, punchthrough technology is used to produce Hitachi IGBT
modules. However, because increased power handling solutions require special considerations, this section
describes matters related to parallel circuit connections of IGBT modules.
5.4.1 V
ce
(sat) Classify and Current Unbalanced Rate
with two rated V
CE
values.
Table 4. Ranking of Collector-Emitter Saturation Voltages
(1) Rated V
CE
= 600 V
Rank
1
2
3
4
5
6
V
CE
( sat ) (V)
1.6 to 1.9
1.7 to 2.0
1.8 to 2.1
1.9 to 2.2
2.0 to 2.3
2.2 to 2.5
6
7
8
9
10
11
12
13
14
15
2.2 to 2.5
2.3 to 2.6
2.4 to 2.7
2.5 to 2.8
2.6 to 2.9
2.7 to 3.0
2.8 to 3.1
2.9 to 3.2
3.0 to 3.3
3.1 to 3.4
(2) Rated V
CE
= 1200
V
Rank
V
ce
( sat ) (V)
The saturation voltage range (
∆
V
ce
( sat ) ) is 0.3 V, as above, and in this condition the current
unbalanced rate (
α
) is 15% where the definition of
α
is as stated in Equation 12:
Equation 12:
α
= { I
c
’ /(I
total
/ 2) - 1 }
!
100 (%)
Definitions:
I
c
’
I
total
Current value per individual IGBT module
Total current per parallel connection pair
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