Hitachi IGBT Module Application Manual
4.3
IGBT Terms, Symbols, and Definitions
Table 2. IGBT Terms, Symbols, and Definitions
TERMS
SYMBOLS
V
CES
V
GES
I
C
P
C
T
J
T
stg
-
-
DEFINITIONS
Maximum allowable collector-emitter voltage at shorted gate.
Maximum allowable gate-emitter voltage at shorted collector.
Within allowable collector power dissipation, maximum allowable value of
DC current to collector terminal.
Under specified heat conditions, maximum allowable value of constant
collector power dissipation.
Range of allowable temperature at junction as basis of ratings.
Range of allowable temperature for storage of IGBT module.
Maximum allowable value of clamping torque when IGBT module is
mounted onto heat sink or support, using specified grease on screw and
contact portions.
Maximum allowable clamping torque when wiring or bus is mounted to
IGBT module terminals.
Under specified conditions, collector current for applying collector-emitter
voltage in cut-off state.
Note: Collector-emitter terminals are shorted.
Under specified conditions, collector current for applying collector-emitter
voltage in cut-off state.
Note: Collector-emitter terminals are shorted.
Under specified conditions, value of saturation voltage when collector
current is conducting.
Under specified conditions, value of gate-emitter voltage when collector
current starts to flow (in threshold region).
Under specified conditions, value of capacitance between gate and emitter
terminals.
Under specified conditions, value of capacitance between gate and collector
terminals.
Under specified conditions, value of capacitance between collector and
emitter terminals.
Under specified conditions, time required for collector-emitter voltage to
reach 10% of its initial value after the moment when ON-gate voltage
has reached 10% of its final value and through the subsequent switching
of IGBT module from OFF state to ON state ( t
d
( on ) + t
r
).
Time required for collector-emitter voltage to reach 90% of its initial value
after the moment when ON gate voltage has reached 10% of its final
value.
Time required for collector-emitter voltage to reach 10% from 90% of its
initial value.
Under specified conditions, time required for collector current to reach 10%
of its initial value after the moment when OFF-gate voltage has reached
90% of its initial value and through the subsequent switching of IGBT
module from ON state to OFF state ( t
d
( off ) + t
r
).
Time required for collector-emitter voltage to reach 90% of its initial value
after the moment when OFF-gate voltage has reached 90% of its initial
value.
Time required for collector current to reach 10% from 90% of its initial
value.
Under thermal steady-state while IGBT module is continuously energized,
value of temperature difference between junction and case per unit
power dissipation at junction. Unit is
o
C/W.
Maximum allowable continuous peak current in forward direction of free-
wheeling diode under specified circuit and temperature conditions.
Maximum allowable continuous peak current in forward direction of free-
wheeling diode under specified conditions.
Maximum instantaneous value of voltage drop between anode and cathode
of free-wheeling diode under specified conditions of forward current
(I
F
) and temperature.
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Screw Torque
Collector-Emitter Cut-Off
Current
Gate-Emitter Leakage Current
I
CES
I
GES
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-ON Time
V
CE
( sat )
V
GE
( TO )
C
ies
C
res
C
oes
t
on
Turn-ON Delay Time
t
d
( on )
Rise Time
Turn-OFF Time
t
t
r
off
Turn-OFF Delay Time
t
d
( off )
Fall Time
Thermal Impedance
R
t
f
th
( j-c )
Reverse Recovery Time
(Free-wheeling diode)
Forward Current
(Free-wheeling diode)
Peak Forward Voltage Drop
(Free-wheeling diode)
t
rr
I
F
V
FM
14