Hitachi IGBT Module Application Manual
4.2
Characteristic Curves
4.2.1 Collector Current vs. Collector-Emitter Voltage
Figure 6 shows the relation between V
CE
and I
C
as a function of the gate-emitter voltage. This
information is used to calculate the power loss of an IGBT’s ON state.
Figure 6. Collector Current vs. Collector-Emitter Voltage
4.2.2 Collector-Emitter Voltage vs. Gate-Emitter Voltage
Figure 7 shows a relation between V
CE
and V
GE
as a function of the collector current and including
the V
GE
area suitable for operating an IGBT. Generally, V
GE
= 15 V.
Figure 7. Collector-Emitter Voltage vs. Gate-Emitter Voltage
9
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