Hitachi IGBT Module Application Manual
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3.1
General Description of IGBT Modules
Part Numbering
Table 1 provides a specific example of the numbering system characteristics for Hitachi IGBT modules.
Table 1. Numbering System Characteristics
M
M
B
N
B
N
1200
GS
12
AW
Part Numbering Example
Assembly IGBT module:
(IGBT
modules
always an M)
Classification of main component:
(IGBT
modules
always a B)
Classification of Configuration:
Single
pack
N
Dual
pack
M
Six
in pack
B
Chopper
Type L
1200
GS
Indication of rated current:
1200: I
C
=1200 Amperes
Development Code:
Type GS or JS: Third Generation
Type GR: Fourth Generation
Type C or D: High-Power
12
AW
Indication of rated V
CES
(in Volts x 100)
Configuration of Characteristic
Identification
3.2
Internal Structure of Module
Figure 1. Dual Pack Module
Figure 1 shows a cross-sectional representation of the internal structure of an Hitachi IGBT module,
specifically a dual-pack.
3.3
Internal Structure of an IGBT Die
Figure 2 shows the structure of punchthrough technology within an IGBT die.
An IGBT die is similar to an n-channel MOSFET in its structure. Although the MOSFET is constituted
of N-N base, the IGBT is P-N base, so the parasitic pnp transistor is formed by an additional P layer.
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