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1 Introduction to Hitachi IGBT Modules
1.1 New Generation of High-Power IGBT Modules
1.2 Inherent Design Concepts
1.3 Application Areas
2 Precautions for Safe Use
2.1 Warning and Caution Symbols
2.2 Notices
3 General Description of IGBT Modules
3.1 Part Numbering
Table 1. Numbering System Characteristics
3.2 Internal Structure of Module
Figure 1. Dual Pack Module
3.3 Internal Structure of an IGBT Die
Figure 2. Structure of IGBT die
3.4 Symbol and Equivalent Circuit
Figure 3. IGBT Symbol and Equivalent Circuit
3.5 Operational Switching Description
4 Specification and Characteristics
4.1 Contents of Specification
4.1.1 Absolute Maximum Ratings
4.1.2 Electrical Characteristics
4.1.3 Outline Drawing for IGBT Modules
Figure 4. Typical IGBT Module Outline Drawing
4.1.4 Ratings and Characteristics
Figure 5. IGBT Module Ratings and Characteristics
4.2 Characteristic Curves
4.2.1 Collector Current vs. Collector-Emitter Voltage
Figure 6. Collector Current vs. Collector-Emitter Voltage
4.2.2 Collector-Emitter Voltage vs. Gate-Emitter Voltage
Figure 7. Collector-Emitter Voltage vs. Gate-Emitter Voltage
4.2.3 Gate Charge Characteristics
Figure 8. Gate Charge Characteristics
4.2.4 Forward Voltage Characteristics of a Free-Wheeling Diode
Figure 9. Forward Voltage Characteristics of a Free-Wheeling Diode
4.2.5 Switching Time vs. Collector Current
Figure 10. Switching Time vs. Collector Current
4.2.6 Switching Time vs. Gate Resistance
Figure 11. Switching Time vs. Gate Resistance
4.2.7 Switching Loss vs. Collector Current
Figure 12. Switching Loss vs. Collector Current
4.2.8 Switching Loss vs. Gate Resistance
Figure 13. Switching Loss vs. Gate Resistance
4.2.9 Reverse-Biased Safe Operating Area
Figure 14. Reverse-Biased Safe Operating Area
4.2.10 Transient Thermal Impedance
Figure 15. Transient Thermal Impedance Characteristics
4.3 IGBT Terms, Symbols, and Definitions
Table 2. IGBT Terms, Symbols, and Definitions
4.3.1 Measurement of IGBT Switching Characteristics
Figure 16. IGBT Switching Characteristics
4.3.2 Measurement of FWD Reverse-Recovery Characteristics
Figure 17. FWD Reverse-recovery Characteristics
5 Operating Parameters
5.1 Derating Factors
5.1.1 Voltage
Equation 1: V CES = V in + V s + V reg +
5.1.2 Current
Equation 2: I p = P inv 5 ac / 5 5
5.1.3 Temperature
5.2 Snubber Circuit
5.2.1 Features of Various Snubber Circuits
5.2.1.1 Snubber Circuit between P and N
Figure 18. Snubber Circuit between P and N
5.2.1.2 Pair of Snubber Circuits between P and N
Figure 19. Pair of Snubber Circuits between P and N
5.2.1.3 Pair of Snubber Circuits between Arms
Figure 20. Pair of Snubber Circuits between Arms
5.2.2 Snubber Circuit Operation
Figure 21. Turn-OFF Mode of bottom arm IGBT
Figure 22. Equivalent Circuit (transient state)
5.2.3 Snubber Circuit Current and Voltage Waveforms
Figure 23. IGBT Module Current and Voltage Waveforms with Snubber Circuit
Figure 24. Snubber Diode Current and Voltage Waveforms
Equation 3: T S = 2 5 ()/ 4
Equation 4: V = I C 5
Equation 5: V f = L sn 5 di c / dt + V fr
Equation 6: T n = 3 5 C s 5 R s
5.2.4 Collector Current Class and Snubber Capacitor Values
Equation 7: C = L st ( I / V )2
Table 3. Snubber Capacitor Values
5.2.5 Snubber Resistance Selection
Equation 8: S n = 0.5 5 C S 5 (V)2
Equation 9: P SN = (2/) 5 S n 5 f c
Equation 10: R s > 2
5.2.6 Snubber Diode Selection
5.3 Gate Driving Considerations
5.3.1 Gate Current and Gate Electric Charge
Figure 25. Example of IGBT switching waveform
5.3.2 Gate Electric Charge Characteristics
Figure 26. Example of Gate Electric Charge Characteristics
5.3.3 Gate Driving Loss Calculation
Equation 11: P G =( V GP + V GN ) 5 Q GO 5 f c
Figure 27. Driving Voltage and Gate Electric Charge
5.3.4 IGBT Driving Voltage
5.4 Parallel Circuitry Connections
5.4.1 V ce (sat) Classify and Current Unbalanced Rate
Table 4. Ranking of Collector-Emitter Saturation Voltages
Equation 12: = { Ic /(I total / 2) - 1 } 5 100 (%)
5.4.2 Parallel Connections and Current Derating
Equation 13: R = {1+(n-1) 5 (1 - /100)/(1 + /100)}/n 5 100
5.4.3 Parallel Connection Line Unbalancing Notes
5.4.3.1 Number of Drivers per Arm
5.4.3.2 Buffer Circuit for the Driver
Figure 28. Driver Buffer Circuit (partial)
Table 5. Recommended Transistors
5.4.3.3 Connecting Gate Resistors in Parallel Circuits
Equation 14: 2 R G > 2 (L gst )/(C ies / 2))1/2
Figure 29. Parallel Connection between IGBT Modules and Driver Circuit
5.4.3.4 Necessity for Symmetry of Main Circuit Wiring
5.4.3.4.1 Wiring Equalization
Figure 30. Wiring to equalize main wiring inductance values
Figure 31. Equalization of Unbalanced Current
5.4.3.4.2 Unbalanced Current Period caused by Wiring
Equation 15: = 100 nH / ( 4.2 m 5 2) @ 12 s
5.4.3.4.3 Wiring Example
Figure 32. Example of Parallel Connection Wiring
5.5 Calculation of Power Dissipation
5.5.1 Power Losses Occurring in Dual-Pack IGBT Modules
5.5.1.1 IGBT Power Dissipation
5.5.1.1.1 Steady-state Power Dissipation
Equation 16: P on = 1/2 v D dt; ( D: On-duty )
Equation 17: D = (1 + sin )/2
Equation 18: P on ={ I 0 / ( 2 )} 5 { a + ( /4 ) b 5 I 0 + ( /4) 5 cos 5 [ a +(8 b/(3 )) 5 I 0 ] }
Figure 33. I C vs. V CE Characteristic
5.5.1.1.2 Turn-ON Power Dissipation and Turn-OFF Power Dissipation
Equation 19: I ave = (2/) 5 I 0
Figure 34. Switching Loss vs. Collector Current
Equation 20: P ton = E ton 5 f c /2
Equation 21: P toff = E toff 5 f c /2
5.5.1.2 Power Dissipation in a Free-Wheeling Diode
5.5.1.2.1 Forward Power Dissipation
Equation 22: P f = (1/2)I 0 sin 5 (a + b I 0 sin ) 5 [ (1- sin ( - )) / 2 ] d = { I 0 / ( 2 )} 5 ...
Figure 35. Forward Voltage Characteristics of Free-Wheeling Diode
5.5.1.2.2 Recovery Power Dissipation
Equation 23: I ave = 5 I 0
Equation 24: P rr = E rr 5 f c /2
5.6 Thermal Impedance and Heat Dissipation Design
5.6.1 Thermal Impedance
5.6.2 Definition of Temperature Measurement Point
Figure 36. Definition of Tc and Th Measurement Points
5.6.3 Heat Dissipation Design
5.6.3.1 Steady State
Figure 37. Thermal Equivalent Circuit
Equation 25: T j = P { R th (j- c) + R th (c-h) + R th (h-a))} + T a
Equation 26: T j = P 5 ( R th (j-c)+ R th (c-h) + R th (h-a))
5.6.3.2 Transient State
Figure 38. Temperature ripple of Tj
Equation 27: T jp = P 1 [ R th(st) 5 ( t 1 / t 2 ) + (1 - t1/t2) 5 R th (t l + t 2 )- R th ( t 2 ...
Figure 39. Transient Thermal Impedance
Figure 40. Transient Thermal Impedance Characteristics
5.7 Dead Time
5.7.1 Dead Time Logic in IGBT modules
5.7.1.1 Typical Configuration
Figure 41. Typical Configuration of a Major Circuit
5.7.1.2 Comparing Dead Time and Real Dead Time
Figure 42. Control Signal, Driver Voltage, and IGBT Collector Voltage Waveforms
Equation 28: T D = T D - (t 3 + t 4 ) + (t l + t 2 )
5.7.2 Calculating Delay Times of IGBTs
5.7.2.1 Turn-ON and Turn-OFF Switching Waveforms
Figure 43. Inductive Load Turn-ON and Turn-OFF Switching Waveforms
5.7.2.2 Calculating Switching Delay Times
Equation 29: I G res (on) = (V GP - V th (on))/(R c + Z on ))
Equation 30: td(on) = -( R G + Z on ) 5 Cies [ln{( V GP - V th (on))/( V GP + V GN ) }]
Equation 31: I Gres (off) = (V GP + V th (off))/( R G + Z off )
Equation 32: t d (off)= -( R G + Z off ) 5 (C ies + C res (0)) 5 ln{(V GN + V th (off))/ (V GP + ...
Figure 44. Parasitic Capacitance
5.7.3 Parametric Effects on Switching Delay Time
5.7.3.1 Examining Influential Parameters
Equation 33: T D = T D - ( t 3 + t 4 ) + ( t 1 + t 2 )
Equation 34: T D = T D + t 2 - t 4
Equation 35: t d (on)=-(R G + Z on ) 5 C ies 5 ln{(V GP - V th (on))/(V GP + V GN )
Equation 36: t d (off)= -(R G + Z off ) 5 3 Cies 5 ln{(V GN + V th (on))/(V GP + V GN )} + Q GC /...
Equation 37: TD=TD [-{(R G + Z on ) 5 C ies 5 ln((V GP - Vth (on))/ (V GP + V GN )}] -[-{(R G + ...
Equation 38: I G res (off)=( V GP + V th (off)) / (R G + Z off )
Equation 39: T D = T D +[-{( R G + Z on ) 5 C ies 5 ln((V GP - V th (on))/(V GP + V GN )}] -[-{(...
5.7.3.2 Effect on Gate Voltages
Figure 45. Gate Voltage - Collector Current Characteristics
Equation 40: v ge f 1 ( I C )
Equation 41: v ge f 2 ( 1 / T J )
5.7.3.3 Determinations of Gate Charge Values
Figure 46. Gate Charge Q GC Values
5.7.3.4 Example of Verification
5.7.3.4.1 Verification Circuit Configuration
Figure 47. Verification Circuit Configuration
5.7.3.4.2 How to Observe Switching Waveforms
5.7.3.4.3 How to Check Vertical Motion
Figure 48. Control Signal and Gate Waveforms
Figure 49. Top and Bottom Arm Waveforms
5.7.3.4.4 Typical Verification
5.8 Short Circuit Protection
5.8.1 Short Circuit Pattern
5.8.2 IGBT Operation during Short Circuit
5.8.3 Short-circuit Current Cut-off
5.8.3.1 Hard Cut-off
5.8.3.2 Soft Cut-off
Figure 50. Short-circuit Protection Waveforms
5.8.4 Short-circuit Current and Gate Voltage Increase
Figure 51. Example of Gate Charge Characteristics
Figure 52. Dependency of Gate Voltage upon C res
Equation 42: i gsc = (v ge (i) - V GP )/ R G
Equation 43: Q res = i gsc 5 t scv
Equation 44: v ge (i) = Q res 5 R G / t scv + V GP
5.8.5 Prevention of Gate Voltage Increase
6 Handling
6.1 Mounting IGBT modules to Heat Sinks
6.1.1 Clamping Torque
Table 6. Clamping Torque
6.1.2 Thermal Compound Grease
Equation 45: q = s 5 t 5 k
Figure 53. Grease Positions
Table 7. Recommended Grease and Specific Gravity
6.1.3 Clamping Order of Screws
Figure 54. Clamping Order for Two-point Clamping Module
Figure 55. Clamping Order for Four-point Clamping Module
6.1.4 Surface Roughness and Warp of Heat Sink
6.1.5 Heat Sink Mounting Hole Diameter
Figure 56. Example of Improper Heat Sink Mounting
Table 8. Recommended Mounting Hole Diameter and Chamfering Value
6.2 Main Terminal
6.2.1 Pre-clamping and Final Clamping of Main Terminal
6.2.2 Recommended Clamping Order of Mounting Screws
6.2.3 Clamping Method for Mounting Screws
Table 9. Recommended Clamping Torque for Terminals
6.2.4 Recommended Screw Length
Figure 57. Cross-sectional View of Screw Hole
Table 10. Size for Screw Hole
6.3 Mounting Precautions
6.3.1 Fast-On Terminal
6.3.2 Environmental
6.3.2.1 Harmful Substances
6.3.2.2 Exposure to Elements
6.4 Storage and Shipping Considerations
6.4.1 Recommended Storage Conditions
6.4.2 Shipping Method
6.5 Precautions against electrostatic failure
6.6 IGBT Module Circuit Arrangement and Wiring Method
6.7 Measurement Precautions
7 Reliability
7.1 Module Failure Regions
Figure 58. Module Failure Regions
7.2 Failure Factors
Table 11. Failure Mechanisms
7.3 Quality Tests
Table 12. Tests and Methods
7.3.1 Examples of Possible Failure Mechanisms
Figure 59. Possible Failure Mechanisms for an IGBT Module
7.3.2 Acceptable Characteristics Limits after Quality Testing
7.3.3 Sample Testing Criteria
7.3.4 Frequency of Sample Testing
7.3.5 Test results
Table 13. Representative Example of Test Results
8 Troubleshooting
8.1 Electrical Failure Analysis
Figure 60. Electrical Failure Analysis
8.2 Device Check Method
Figure 61. Curve Tracer-based IGBT module Checking
9 Failure Precautions