Fig.3 Comparison of forward characteristics
10
10
10
Forward current
I
F
(A)
Forward current
I
F
(A)
Forward current
I
F
(A)
1
1
1
0.1
0.1
0.1
YG805C04R 100°C
YG805C04R 25°C
YG865C04R 100°C
YG865C04R 25°C
0.01
0.01
YG805C06R 100°C
YG805C06R 25°C
YG865C06R 100°C
YG865C06R 25°C
0.01
YG805C10R 100°C
YG805C10R 25°C
YG865C10R 100°C
YG865C10R 25°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage
V
F
(V)
Forward voltage
V
F
(V)
Forward voltage
V
F
(V)
Fig.4 Comparison of reverse characteristics
YG805C04R
10
3
T
j
= 100°C
10
3
YG805C06R
T
j
= 100°C
10
3
YG805C10R
T
j
= 100°C
Reverse current
I
R
(µA)
Reverse current
I
R
(µA)
YG865C04R
10
2
10
2
YG865C06R
Reverse current
I
R
(µA)
10
2
YG865C10R
T
j
= 25°C
10
1
10
1
YG805C04R
T
j
= 25°C
YG805C06R
10
1
YG805C10R
T
j
= 25°C
10
0
10
0
10
0
YG865C04R
10
20
30
40
10
20
YG865C06R
30
40
50
60
10
–1
YG865C10R
0
10 20 30 40 50 60 70 80 90 100 110
Reverse voltage
V
R
(V)
Reverse voltage
V
R
(V)
Reverse voltage
V
R
(V)
3. Device Characteristics
Figure 3
compares the forward characteristics of
the low
I
R
-SBD with those of conventional products,
and
Fig. 4
compares their reverse characteristics. The
SBD loss is the sum of the forward and reverse losses,
and it is desirable that this loss be reduced within the
actual operating temperature range. In particular, the
reverse loss caused by increased
I
R
at higher tempera-
tures must be considered. A tradeoff relation exists
between
V
F
and
I
R
, however, and
V
F
typically increases
when
I
R
is reduced. The newly developed 40 to 100 V
SBD achieves a dramatic decrease in loss at high
temperatures through the use of a new barrier metal
as described in
chapter 2
and optimized crystal specifi-
cations in order to achieve an approximate 10 %
increase in
V
F
at rated current compared to a conven-
tional product, and an
I
R
that is reduced to approxi-
mately 1/10th that of the conventional product.
4. Consideration of the Generated Loss
A simulation was performed to calculate the loss
Low
I
R
Schottky Barrier Diode Series
59